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Selective area deposited blue GaN-InGaN multiple-quantum well light emitting diodes over silicon substrates

Identifieur interne : 012447 ( Main/Repository ); précédent : 012446; suivant : 012448

Selective area deposited blue GaN-InGaN multiple-quantum well light emitting diodes over silicon substrates

Auteurs : RBID : Pascal:00-0030461

Descripteurs français

Pascal (Inist)
- 8560J, 8105E, 6865, 8530V, 8115H, 8115G, 8115K, 8540H, Etude expérimentale, Gallium composé, Indium composé, Semiconducteur III-V, Semiconducteur bande interdite large, Puits quantique semiconducteur, Superréseau semiconducteur, Diode électroluminescente, Epitaxie jet moléculaire, Méthode MOCVD, Croissance semiconducteur, Masque.

English descriptors

KwdEn :
- Experimental study, Gallium compounds, III-V semiconductors, Indium compounds, Light emitting diodes, MOCVD, Masks, Molecular beam epitaxy, Semiconductor growth, Semiconductor quantum wells, Semiconductor superlattices, Wide band gap semiconductors, quantum well devices.

Abstract

We report on fabrication and characterization of blue GaN-InGaN multi-quantum well (MQW) light-emitting diodes (LEDs) over (111) silicon substrates. Device epilayers were fabricated using unique combination of molecular beam epitaxy and low-pressure metalorganic chemical vapor deposition growth procedure in selective areas defined by openings in a SiO₂ mask over the substrates. This selective area deposition procedure in principle can produce multicolor devices using a very simple fabrication procedure. The LEDs had a peak emission wavelength of 465 nm with a full width at half maximum of 40 nm. We also present the spectral emission data with the diodes operating up to 250°C. The peak emission wavelengths are measured as a function of both dc and pulse bias current and plate temperature to estimate the thermal impedance. © 2000 American Institute of Physics.

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Le document en format XML

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<front><div type="abstract" xml:lang="en">We report on fabrication and characterization of blue GaN-InGaN multi-quantum well (MQW) light-emitting diodes (LEDs) over (111) silicon substrates. Device epilayers were fabricated using unique combination of molecular beam epitaxy and low-pressure metalorganic chemical vapor deposition growth procedure in selective areas defined by openings in a SiO<sub>2</sub>
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Selective area deposited blue GaN-InGaN multiple-quantum well light emitting diodes over silicon substrates

Selective area deposited blue GaN-InGaN multiple-quantum well light emitting diodes over silicon substrates

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Abstract

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